Post last wiring level inductor using patterned plate process

ABSTRACT

A semiconductor structure. The semiconductor structure includes: a substrate having at least one metal wiring level within the substrate; an insulative layer on a surface of the substrate; an inductor within the insulative layer; and a wire bond pad within the insulative layer. The inductor and the wire bond pad are substantially co-planar. The inductor has a height greater than a height of the wire bond pad.

This application is a divisional application claiming priority to Ser.No. 11/161,217, filed Jul. 27, 2005.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates generally to the field of semiconductorprocessing, and more particularly, to a method of forming an inductorabove the last metal wiring level, and the structure so formed.

2. Related Art

Conventionally inductors are fabricated within metal wiring levels of asemiconductor device. This type of fabrication requires at least twolevels of thick conductive wire and two levels of vias, necessitatingthe use of at least four masking steps. As a result, conventionalinductor fabrication creates high production costs. In addition,conventional inductor fabrication produces inductors that tend to havehigh parasitic capacitance due to the close proximity of the inductor tothe substrate. Finally, the large physical dimensions (height/width)needed to increase inductor quality factor can be incompatible withstandard small dimension on chip wires and vias.

Therefore, there is a need in the industry for a method of forming aninductor that solves these and other problems.

SUMMARY OF THE INVENTION

The present invention provides a method of forming semiconductorstructures, and the structures so formed, that solve the above-statedand other problems.

A first aspect of the invention provides a method of forming asemiconductor device, comprising: providing a substrate having a lastmetal wiring level within the substrate; depositing an insulative layeron the surface of the substrate; forming an inductor within theinsulative layer on a planar level above the last metal wiring level;and forming an electrical interconnection within the insulative layer,wherein at least a portion of the electrical interconnection is coplanarwith the inductor.

A second aspect of the invention provides a method of forming asemiconductor device, comprising: providing a substrate having a lastmetal wiring level within the substrate; depositing a first insulativelayer on the surface of the substrate; forming an electricalinterconnection within the first insulative layer; depositing a secondinsulative layer over the first insulative layer and the electricalinterconnection; and forming an inductor within the second insulativelayer on a planar level above the last metal wiring level.

A third aspect of the invention provides a method of forming asemiconductor device, comprising: providing a substrate having a lastmetal wiring level within the substrate; depositing a first insulativelayer on the surface of the substrate; forming a portion of anelectrical interconnection within the first insulative layer; depositinga second insulative layer over the first insulative layer; forming aninductor within the second insulative layer on a planar level above thelast metal wiring level; and forming a remaining portion of theelectrical interconnection within the second insulative layer.

A fourth aspect of the invention provides a semiconductor structure,comprising: a substrate having a last metal wiring level within thesubstrate; an insulative layer on a surface of the substrate; and aninductor within the insulative layer on a planar level above the lastmetal wiring level.

The foregoing and other features and advantages of the invention will beapparent from the following more particular description of theembodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of this invention will be described in detail, withreference to the following figures, wherein like designations denotelike elements, and wherein:

FIG. 1 depicts a cross-sectional view of a semiconductor structurecomprising an insulative layer formed over a last metal wiring level,having an electrical interconnection, in accordance with a firstembodiment of the present invention;

FIG. 2 depicts the structure of FIG. 1 having an opening formed withinthe insulative layer;

FIG. 3 depicts the structure of FIG. 2 wherein the opening extends downto the last metal wiring level;

FIGS. 4-7 depict a patterned plate process used in the formation of aninductor;

FIG. 8 depicts the structure of FIG. 7 having a photoresist layerremoved;

FIG. 9 depicts the structure of FIG. 8 having a dielectric layer formedover the surface of the structure;

FIG. 10 depicts the structure of FIG. 9 having an opening formed withinthe dielectric layer to expose the electrical interconnection;

FIG. 11 depicts a top view of the structure of FIG. 10;

FIG. 12 depicts a cross-sectional view of a semiconductor structurecomprising a plurality of insulative layers formed over a last metalwiring level, and an electrical interconnection formed therein, inaccordance with a second embodiment of the present invention;

FIG. 13 depicts the structure of FIG. 12 having a pair of openingsformed within a photoresist layer;

FIG. 14 depicts the structure of FIG. 13 having a dielectric layerformed over the surface of the structure;

FIG. 15 depicts the structure of FIG. 14 having an opening formed withinthe dielectric layer;

FIG. 16 depicts the structure of FIG. 15 having an opening formed withinthe insulative layers;

FIG. 17 depicts the structure of FIG. 16 wherein the opening extendsdown to the last metal wiring level;

FIG. 18 depicts the structure of FIG. 17 following removal of thedielectric layer;

FIG. 19 depicts the structure of FIG. 18 having the portion ofinsulative layer removed from within the opening;

FIG. 20 depicts the structure of FIG. 19 following a patterned plateprocess;

FIG. 21 depicts the structure of FIG. 20 having an opening formed withinthe structure to expose the electrical interconnection;

FIG. 22 depicts a cross-sectional view of a semiconductor structurecomprising a first and second insulative layer formed over a last metalwiring level, in accordance with a third embodiment of the presentinvention;

FIG. 23 depicts the structure of FIG. 22 having a pair of openingswithin a photoresist layer;

FIG. 24 depicts the structure of FIG. 23 having a second layer ofphotoresist deposited over the surface of the structure;

FIG. 25 depicts the structure of FIG. 24 having openings formed withinthe second layer of photoresist;

FIG. 26 depicts the structure of FIG. 25 wherein the capping layer isremoved from within the opening;

FIG. 27 depicts the structure of FIG. 26 following a patterned plateprocess;

FIG. 28 depicts the structure of FIG. 27 following removal of the secondlayer of photoresist;

FIG. 29 depicts the structure of FIG. 28 following formation of anelectrical interconnection;

FIG. 30 depicts a cross-sectional view of a semiconductor structurecomprising a capping layer and an insulative layer formed over a lastmetal wiring level, in accordance with a fourth embodiment of thepresent invention;

FIG. 31 depicts the structure of FIG. 30 having openings formed withinthe insulative layer;

FIG. 32 depicts the structure of FIG. 31 wherein the capping layer isremoved from within the opening;

FIG. 33 depicts the structure of FIG. 32 following a partial patternedplate process and the deposition of a layer of photoresist;

FIG. 34 depicts the structure of FIG. 33 having openings formed withinthe layer of photoresist;

FIG. 35 depicts the structure of FIG. 34 following completion of thepatterned plate process;

FIG. 36 depicts the structure of FIG. 35 following removal of the layerof photoresist;

FIG. 37 depicts the structure of FIG. 36 following removal of the lineron the surface of the structure;

FIG. 38 depicts the structure of FIG. 37 having an opening formed withinthe insulative and capping layers;

FIG. 39 depicts the structure of FIG. 38 having an electricalinterconnection formed within the opening;

FIG. 40 depicts a cross-sectional view of a semiconductor structurecomprising a capping layer and a photoresist layer formed over a lastmetal wiring level, in accordance with a fifth embodiment of the presentinvention;

FIG. 41 depicts the structure of FIG. 40 having openings formed withinthe photoresist layer;

FIG. 42 depicts the structure of FIG. 41 following removal of thecapping layer from within the opening;

FIG. 43 depicts the structure of FIG. 42 following a patterned plateprocess;

FIG. 44 depicts the structure of FIG. 43 following formation ofelectrical interconnections;

FIG. 45 depicts the structure of FIG. 44 having a dielectric layerformed over the surface of the structure;

FIG. 46 depicts the structure of FIG. 45 having an opening within thedielectric layer to expose one of the electrical interconnections;

FIG. 47 depicts a cross-sectional view of a semiconductor structurecomprising a substrate having a last metal wiring level formed therein,and a capping layer over the substrate, in accordance with a sixthembodiment of the present invention;

FIG. 48 depicts the structure of FIG. 47 having openings formed withinthe capping layer;

FIG. 49 depicts the structure of FIG. 48 having a conductive layerdeposited over the capping layer;

FIG. 50 depicts the structure of FIG. 49 having a patterned layer ofphotoresist over the conductive layer;

FIG. 51 depicts the structure of FIG. 50 following a patterned plateprocess;

FIG. 52 depicts the structure of FIG. 51 following removal of the layerof photoresist;

FIG. 53 depicts the structure of FIG. 52 having a dielectric layerdeposited over the surface of the structure;

FIG. 54 depicts the structure of FIG. 53 following etching;

FIG. 55 depicts the structure of FIG. 54 having a second dielectriclayer deposited over the surface of the structure;

FIG. 56 depicts the structure of FIG. 55 having an opening formed withinthe second dielectric layer;

FIG. 57 depicts the structure of FIG. 56 having an electricalinterconnection formed within the opening in the second dielectriclayer;

FIG. 58 depicts a cross-sectional view of a semiconductor structurecomprising a substrate having a last metal wiring level formed therein,a capping layer and a layer of photoresist over the substrate, inaccordance with a seventh embodiment of the present invention;

FIG. 59 depicts the structure of FIG. 58 having vias formed therein;

FIG. 60 depicts a top view of the structure of FIG. 58 having viasformed within the structure;

FIG. 61 depicts the structure of FIG. 60 having a second layer ofphotoresist deposited over the surface of the structure;

FIG. 62 depicts the structure of FIG. 61 having troughs formed withinthe photoresist layers;

FIG. 63 depicts the structure of FIG. 62 having the capping layerremoved from the base of the troughs;

FIG. 64 depicts the structure of FIG. 63 following a patterned plateprocess;

FIG. 65 depicts the structure of FIG. 64 following removal of the secondphotoresist;

FIG. 66 depicts the structure of FIG. 65 following formation of aelectrical interconnection; and

FIG. 67 depicts a top view of the structure of FIG. 66.

DETAILED DESCRIPTION OF THE INVENTION

Although certain embodiments of the present invention will be shown anddescribed in detail, it should be understood that various changes andmodifications might be made without departing from the scope of theappended claims. The scope of the present invention will in no way belimited to the number of constituting components, the materials thereof,the shapes thereof, the relative arrangement thereof, etc. Although thedrawings are intended to illustrate the present invention, the drawingsare not necessarily drawn to scale.

In accordance with a first embodiment, FIG. 1 depicts a cross-sectionalview of a structure 10 comprising at least a portion of a substrate 12,wherein the substrate 12 may comprise silicon or other similarly usedmaterial. The substrate 12 further includes at least a first 14 and asecond 16 conductive element therein, wherein the conductive elements14, 16 comprise conductive wires within a last metal wiring level of thestructure 10. Wires 14 and 16 are preferably fabricated using adamascene copper process, as known in the art, but could be fabricatedusing any known method, including damascene and subtractive etch, andany conductor.

The structure 10 further includes a capping dielectric layer 18deposited over the surface of the last metal wiring level of thesubstrate 12. The capping layer 18 prevents the copper within the wires14, 16 from diffusing into the remaining portion of the structure 10formed above the wires 14, 16. The capping layer 18 may comprise one ormore of layers of ‘SiN’, ‘SiC’, ‘SiCN’, etc., deposited using methodsknown in the art such as plasma enhanced vapor deposition (PECVD). By‘SiN’, SiC’, or ‘SiCN’, we are referring to dielectrics which would alsocontain impurities, such as H, and would likely not have atomic ratiosof 1:1 (e.g., a ‘SiN’ film could consist of Si₃N₄H₂). Prior todepositing the capping layer 18, a surface clean, such as a 10 secondNH₃ or H₂ plasma may be performed. The structure 10 further includes aninsulative layer 20, comprising a dielectric, such as SiCOH or SiO₂,etc., deposited over the capping layer 18. An electricalinterconnection, such as a wire bond or soldier bump pad 22 is formedwithin the insulative layer 20 and the capping layer 18, over andelectrically contacting the second wire 16 within the last metal wiringlevel of the structure 10, as known in the art. A layer of photoresist24 is applied over the wire bond pad 22 and the insulative layer 20. Thelayer of photoresist 24 may have a thickness in the range of 5-30 μm,e.g., 10 μm, and can either be applied using spin-on or tape processes,as known in the art.

As illustrated in FIG. 2, at least one feature opening or via 26 isformed within the layer of photoresist 24, down to the insulative layer20, above the first wire 14 of the last metal wiring level. The via 26may be formed having a width 28 in the range of about 10-50 μm, e.g., 20μm. A reactive ion etch (RIE) or wet chemical etch process is performeddown to the surface of the wire 14 to remove the insulative layer 20 andthe capping layer 18 from within the via 26, as shown in FIG. 3. Any RIEor wet chemical etch could be used, as known in the art, such as aparallel plate etch at 100 mT using gases such as perfluorocarbons(PFC), oxygen. CO, Ar, etc., as known in the art.

A “patterned plate” process, illustrated in FIGS. 4-7, is then performedto fabricate the conductive portion of a transmission line. “Patternedplate” process as used herein refers to the plating process used to forman electrically conductive feature or transmission line within a viaand/or wire trench, wherein the via has an opening diameter in the rangeof about 1-1000 micron. As illustrated in FIG. 4, the patterned plateprocess begins with the deposition of a liner 30. The liner 30 may bedeposited over the surface of the structure 10 using sputtering, orother similarly used techniques as known in the art, having a thicknessin the range of about 10-500 nm, e.g., 50 nm. The liner 30 may compriseone or more layers of Ta, TaN, TaSiN, Ru, etc. A seed layer 32 is thensputter deposited over the liner 30, as also shown in FIG. 4. The seedlayer 32 may comprise Cu, or other similarly used material, and may havea thickness in the range of about 50-1000 nm, e.g., 150 nm.

As illustrated in FIG. 5, the excess seed layer 32 on the surface of thesubstrate 12 is removed using a chemical mechanical polish (CMP), e.g.,a stiff pad, such as a Rodel Corporation IC1000™ pad, copper CMP if theseed layer 32 comprises copper, or other similarly used technique. Astandard brush clean, preferably clustered to the CMP tool, is thenperformed followed by a standard wet chemical clean, such as 100:1 DHFacid, to remove slurry from the via 26. Removing the excess seed layer32 on the surface of the substrate 12, leaving the seed layer 32 withinthe opening 26, prevents deposition of the conductive material in thenext step from plating in undesired areas. It should also be noted thatthe rather low aspect ratio, (aspect ratio=width/height), e.g., <1, via26 diameter allows for easier removal of the slurry during this step.

As illustrated in FIG. 6, a conductive material 34 is deposited withinthe via 26 of the structure 10. The conductive material 34, e.g.,copper, is deposited using electro-plating copper deposition (ECD),assuming the seed layer 32 preferably comprises copper seed or aconductive seed layer compatible with Cu electroplating, such asaluminum. As shown, the conductive material 34 may be deposited having anon-planar exposed surface. To complete the patterned plate process, aCMP or other similar process, such as an etchback process, may then beperformed to remove the excess conductive material 34 extending abovethe surface of the structure 10, as well as the excess liner 30 on thesurface of the structure 10, to form a transmission line, such as aninductor 35, as illustrated in FIG. 7. If CMP is used, then a brief CuCMP would be needed first if the Cu conductive material 34 extends abovethe surface of the liner 30 followed by a liner CMP process to removethe liner 30.

A wet or dry photoresist strip process is then performed to remove thelayer of photoresist 24, as shown in FIG. 8. Suitable dry stripprocesses include downstream or plasma strip chambers using reducingambients, such as one or more of nitrogen, hydrogen, ammonia, etc., suchthat the copper wires are not oxidized or corroded. Wet chemical resiststrips, such as NMP or others known in the art could also be employed. Awafer clean, such as diluted hydrofluoric acid (DHF) or a commerciallyavailable clean compatible with Cu, is then optionally performed toremove debris created during the resist strip. Following the removal ofthe photoresist 24, the inductor 35 and wire bond pad 22 are exposed.

A conformal dielectric layer 36 is deposited over the surface of thestructure 10, as illustrated in FIG. 9. The dielectric layer 36 maycomprise a layer of SiN, a layer of SiO₂, a second layer of SiN and alayer of polyimide, (individual layers of the dielectric 36 are notshown for purposes of simplicity), and have a total thickness in therange of about 3-30 μm, e.g., 10 μm. The SiN and SiO₂ layers of thedielectric 36 may be formed using plasma CVD, or other similartechnique, while the polyimide would be spin-applied as known in theart. Alternatively, the polyimide could be replace by any polymericpassivation film, such as BCB™.

As illustrated in FIG. 10, a pad via lithography step, followed by a RIEis performed to create an opening 38 in the dielectric 36 above the wirebond pad 22, thereby exposing the wire bond pad 22 for electricalconnection, as known in the art. Alternatively a soldier bump could beformed over pad 22, as known in the art.

FIG. 11 shows a top view of the structure 10 of FIG. 10. The structure10 is a spiral planer type of inductor 35, as known in the art.

In accordance with a second embodiment, FIG. 12 depicts a structure 100similar to the structure 10 shown in FIG. 1 including at least a portionof a substrate 112 comprising silicon or other similarly used material.The substrate 112 further includes at least a first 114 and a second 116conductive element therein, wherein the conductive elements 114, 116comprise wires, consisting of a conductor such as copper, within a lastmetal wiring level of the structure 100. The structure 100 furtherincludes a capping layer 118 deposited over the surface of the lastmetal wiring level of the substrate 112. The capping layer 118 maycomprise SiN, SiC, SiCN, etc. as discussed supra. The structure 100further includes an insulative layer 120, such as SiO₂, SiN, etc.,deposited over the capping layer 118 preferably a single layer of SiO₂having a thickness in the range of about 0.5-5 μm, e.g., 1 μm. Thestructure 100 also includes an electrical interconnection, such as awire bond or soldier bump pad 122, formed over and electricallycontacting the second wire 116 within the last metal wiring level of thestructure 100.

A first layer of photo-imagable material, such as uncuredphoto-sensitive polyimide (PSPI) 124 is formed over the surface of thestructure 100. Other photo-imagable materials, such as photoresist,could also be employed. The first layer of PSPI 124 may be formed usingspin-on methods as known in the art, or other similarly used technique,to a thickness in the range of about 3-20 μm, e.g., 5 μm. A layer of lowtemperature oxide 126 may then be deposited over the first layer of PSPI124 using PECVD, spin-on, or other similarly used technique. The layerof low temperature oxide 126 may be deposited having a thickness in therange of about 0.05-1 μm, e.g., 0.1 μm. It should be noted that “lowtemperature” as used herein refers to a temperature which will notdegrade the first layer of PSPI 124, i.e., in the range of about 25-350°C., e.g., 150-200° C. A second layer of photo-imagable material, such asPSPI 128 may then be deposited, using spin-on methods as known in theart, over the layer of low temperature oxide 126. As with the firstlayer of PSPI 124, photoresist could also be used. The second layer ofPSPI 128 may be formed having a thickness in the range of about 3-20 μm,e.g., 8 μm.

As illustrated in FIG. 13, the second layer of PSPI 128 islithographically patterned and developed to form at least one opening.In this example, two of the openings are shown in this cross-sectionalview, a first opening 130 above the first copper wire 114 within thelast metal wiring level, and a second opening 132.

A layer of photoresist 134, having a thickness in the range of about3-10 mm thick, e.g., 5 μm, is applied over the surface of the substrate112, as illustrated in FIG. 14. After the photoresist 134 is imaged witha via opening, as illustrated in FIG. 15, a dielectric RIE or wet etch,is performed to form an opening 136 in the layer of low temperatureoxide 126 in the region above the first copper wire 114. Subsequently,the first layer of PSPI 124 beneath the opening 136 is then etched suchthat an isotropic undercut profile 138 is formed within the first layerof PSPI 124, as shown in FIG. 16.

As illustrated in FIG. 17, the insulative layer 120 is then etchedbeneath the opening 136 using a reactive ion etch (RIE), or othersimilar process, stopping on the Cu capping layer 118 above the firstcopper wire 114 within the last metal wiring level.

As shown in FIG. 18, the photoresist 134 is removed using a standard wetchemical or plasma strip processes. A wet etch, such as 100:1 dilute HFacid (DHF), is then performed to remove the excess low temperature oxide126 extending within the first opening 130, as illustrated in FIG. 19.Since the low temperature oxide 126 is deposited at ˜200° C., it willhave a much higher etch rate in DHF acid than thermal oxide. Finally, Cucapping layer 118 is removed using a standard RIE or wet etch processes,exposing Cu wire 114.

As illustrated in FIG. 20, the patterned plate process described andillustrated in FIGS. 4-7 of the first embodiment, is used to form aliner 140, a seed layer 142 and a conductive material 144 within thefirst and second openings 130, 132, thereby forming a transmission line,or in this example, an inductor 133.

After a Cu capping dielectric layer 145 is deposited, similar to layer118, a mask (not shown) is used to remove the first and second layers ofPSPI 124, 128 and the low temperature oxide 126, forming an opening 146to expose the wire bond pad 122, as shown in FIG. 21. Alternatively, anelectroless plating process, using CoWP or other known Cu cappingmetals, could be employed to cap the Cu wires 144 and 142, as known inthe art.

The structure 100 is a spiral inductor 133 having a top view similar tothe one shown in FIG. 11.

In accordance with a third embodiment, FIG. 22 depicts a structure 200comprising a substrate 212 including at least one conductive wire withina last metal wiring level, in this example, a first 214 and a secondwire 216 are shown within the last metal wiring level. The structure 200further includes a capping layer 218 deposited over the surface of thelast metal wiring level of the substrate 212. The capping layer 218 maycomprise SiN, SiC, SiCN, etc., as described supra. A layer ofphoto-imagable material, such as PSPI 220 may be deposited over thecapping layer 218 using PECVD deposition. The PSPI 220 may be depositedhaving a thickness in the range of about 5-30 μm, e.g., 10 μm.Alternatively, as with the previous embodiments, the layer of PSPI 220could consist of photoresist.

As illustrated in FIG. 23, the layer of PSPI 220 is patterned anddeveloped to form a first 222 and second opening 224 in thiscross-sectional view within the layer of PSPI 220 above the first andsecond wires 214, 216 of the last metal wiring level. The first andsecond openings 222, 224 are formed down to the capping layer 218 andhave a width 226 in the range of about 3-30 μm, e.g., 5 μm.

A second layer of photoresist 228 is then applied over the surface ofthe structure 200 filling the first and second openings 222, 224 withinthe PSPI 220, as shown in FIG. 24. The second layer of photoresist 228is then lithographically patterned and developed down to the surface ofthe PSPI 220 to form a third opening 230 and a fourth opening 232 whichare within the second layer of photoresist 228, as shown in FIG. 25. Thethird opening 230 within the second layer of photoresist 228 connects tothe first opening 222 within the PSPI 220 to form a dual damascenefeature.

An etch is performed, e.g., a nitride etch if the capping layer 218comprises nitride, to remove the capping layer 218 from the firstopening 222 in the PSPI 220, as shown in FIG. 26. A DHF or similarclean, as known in the art, is performed to remove excess debris createdduring the etch.

As illustrated in FIG. 27, the patterned plate process, described andillustrated in FIGS. 4-7 of the first embodiment, is used to deposit aliner 234, a seed layer 236 and a conductive material 238 within theopenings 222, 230, 232 to form a transmission line, or in this example,an inductor 233.

The second layer of photoresist 228 is removed, as shown in FIG. 28,using a resist strip, such as a solvent or non-oxidizing plasma etch, ora downstream RIE process. A DHF clean process is then performed toremove debris created during the resist strip. As with the previousembodiment, the Cu layers 230 and 238 are then capped with a dielectricor conductive diffusion barrier. If a dielectric diffusion barrier isused, then it should be thinner than the capping layer 218, e.g., ½ thethickness of the capping layer 218.

An electrical interconnection, such as a wire bond or soldier bump pad240, is then formed within the second opening 224 in the layer of PSPI220, as illustrated in FIG. 29. First, an unpatterned RIE or wet etch isperformed to remove the capping layer 218. If a dielectric Cu diffusionbarrier was deposited over Cu layers 230 and 238, as discussed above,then a portion of the diffusion barrier would also be removed. The wirebond pad 240 may be formed having a width 242 in the range of about50-500 μm, e.g., 100 μm wide.

The structure 200 is a spiral inductor 233 having a top view similar tothe one shown in FIG. 11.

In accordance with a fourth embodiment, FIG. 30 shows a structure 300comprising a substrate 312 including at least one conductive wire withina last metal wiring level, in this example, a first 314 and a secondwire 316 are shown within the last metal wiring level. The structure 300further includes a capping layer 318 and insulating layer 320 depositedover the surface of the last metal wiring level of the substrate 312,similar to layers 18 and 20 in FIG. 1 with thickness in the range ofabout ˜0.1 μm and 1 μm, respectively. Although specific thickness valuesare given for layers 318 and 320, they could range in thickness fromabout 0.03-0.5 μm and 0.5-5 μm, respectively.

At least one opening may be formed within the insulative layer 320. Asillustrated in FIG. 31, a first dual damascene opening 322 and a secondsingle damascene opening 324 are formed within the insulative layer 320of this cross-sectional view. The dual damascene opening 322 is formedabove the first wire 314 of the last metal wiring level. Dual damasceneopens are formed by sequentially patterning and etching wires and vias,as known in the art. An etch process, e.g., a RIE process, is performedto remove the capping layer 318 from within the dual damascene opening322 to expose the surface of the first wire 314 in the last metal wiringlevel, as shown in FIG. 32. Note that, although dual damascene wires andvias are shown, a single damascene process could be employed to form thevia directly down to the wire 314.

As illustrated in FIG. 33, the patterned plate process described andillustrated in FIGS. 4-7 of the first embodiment, is used to deposit aliner 326, a seed layer 328 and a conductive material 330 within thefirst and second openings 322, 324. As illustrated in FIG. 33, the liner326 does not need to be removed from the surface of the substrate 300.Also, following the CMP process used to remove the seed layer 328 on thesurface of the structure 300, and prior to the deposition of theconductive material 330, (as depicted in FIG. 5 of the firstembodiment), a layer of photoresist or PSPI 332 may be deposited overthe surface of the structure 300. The photoresist 332 may be formedhaving a thickness of about 3-20 μm, e.g., 8.0 μm. The photoresist 332is then patterned and developed to form a first 334 and a second opening336 within the photoresist 332 above the first 322 and second openings324 within the insulative layer 320, as shown in FIG. 34. It should benoted that the first and second openings 334, 336 made within thephotoresist 332 have a width greater than the width of the first andsecond openings 322, 324 in the insulative layer 320, forming an“underlap” 338 in the range of about 0.1-5 μm, e.g., 200 nm. Theunderlap 338 leaves a portion of the liner 326 exposed, so that thephotoresist 332 is fully removed from the trenches 322 and 324.

At this point, a patterned plate Cu or other conductor deposition isperformed, preferably using Cu electroplating as discussed supra, tofill the features 334 and 336 with Cu 330. Next an optional Cu CMP stepis performed to planarize the surface, as discussed supra and shown inFIG. 35.

As illustrated in FIG. 36, the photoresist 332 is removed using a wet ordry strip as discussed supra, leaving the freestanding Cu wires. Theexposed liner 326 is then removed from the surface of the structure 300using perfluorocarbon (PFC) RIE process, a wet etch such as hydrogenperoxide and ammonium hydroxide clean, etc., as shown in FIG. 37. Priorto forming the AlCu pad level, a Cu capping layer, either dielectric orconductive, is formed similar to layer 145 discussed in FIG. 21.

A layer of photoresist (not shown) may be applied over the surface ofthe structure 300 to form an opening 332 within the insulative layer 320and the capping layer 318 down to the second wire 316 of the last metalwiring level, as shown in FIG. 38. Note that the use of a selectiveconductive cap (e.g., an electroless CoWP electroplated film) over theCu wires is shown. An electrical interconnection, such as an AlCu wirebond pad 334, is then formed within the opening 332, as known in the art(FIG. 39).

The structure 300 forms a spiral inductor 333 having a top view similarto the one shown in FIG. 11.

In accordance with a fifth embodiment, FIG. 40 shows a structure 400comprising a substrate 412 including at least one conductive elementwithin a last metal wiring level, in this example, a first conductivewire 414 and portions of a transmission line, in this example twoportions 416, 418 of an inductor are shown, within the last metal wiringlevel. The structure 400 further includes a capping layer 420 depositedover the surface of the last metal wiring level of the substrate 412.The capping layer 420 may comprise SiN, SiC, SiCN, etc., as discussedsupra. The structure 400 further includes a layer of uncuredphoto-sensitive polyimide (PSPI) 422 formed over the capping layer 420.The PSPI 422 may be formed using spin-on processes, as known in the art,to a thickness in the range of about 1-30 μm, e.g., 6 μm.

As illustrated in FIG. 41, a first 424, a second 426 and a third opening428 are formed within this cross-sectional view of the PSPI 422 abovethe location of the first wire 414 and the two portions 416, 418 of theinductor within the last metal wiring level. The openings 424, 426, 428within the PSPI 422 may be formed by exposing and developing the PSPI422 using a mask (not shown), followed by a develop process and a curingprocess, as known in the art.

As shown in FIG. 42, the capping layer 420 within the openings 424, 426,428 is removed down to the surface of the last metal wiring level. Thecapping layer 420 may be removed using a standard RIE process in aparallel plate reactor with perfluorocarbons and oxidizers, as known inthe art.

The patterned plate process described in the first embodiment andillustrated in FIGS. 4-7 is then performed to deposit a liner 430, aseed layer 432 and a conductive material 434, thereby forming aconductive wire 429 and a first 431 and second 433 remaining portions ofthe inductor 435, as illustrated in FIG. 43. Next, a selectiveconductive Cu capping layer 437, (e.g., CoWP) is deposited over thesurface of the structure, as described supra.

Electrical interconnections, such as wire bond pads or solder bumps 436,438 are formed on the surface of the structure 400 as known in the art.In this example, the wire bond pads 436, 438 are formed above, and inelectrical connection to, the conductive wire 429 and the second portion433 of the inductor 435, respectively, (FIG. 44). Note that the wirebond pad 438 fully covers the Cu wires so that the Cu is not exposed toan AlCu etch process, which would corrode the Cu.

As illustrated in FIG. 45, a layer of conformal dielectric 440 isdeposited over the surface of the substrate 412. The dielectric 440 maycomprise a layer of SiN, a layer of SiO, a second layer of SiN and alayer of polyimide, (the individual layers of the dielectric 440 are notshown for purposes of simplicity), and have a total thickness in therange of about 3-30 μm, e.g., 10 μm. Each of the layers of thedielectric 440 may be formed using plasma CVD or spin-on method, orother similar technique, as discussed supra.

As illustrated in FIG. 46, an opening 442 is formed within the conformaldielectric 440 above the wire bond pad 436 connecting to the conductivewire 429. The opening 442 may be formed using PSPI develop, followed bya RIE, thereby exposing the wire bond pad 436 for electrical connection,as discussed supra.

The structure 400 is a spiral inductor 435 having a top view similar tothe one shown in FIG. 11.

In accordance with a sixth embodiment, FIG. 47 shows a structure 500comprising a substrate 512 including at least one conductive elementwithin a last metal wiring level, in this example, a first conductivewire 514 and at least one portion of an inductor 516. The structure 500further includes a capping layer 518 deposited over the surface of thelast metal wiring level of the substrate 512. The capping layer 518 maycomprise SiN, SiC, SiCN, etc., as discussed supra.

As shown in FIG. 48, openings 520, 522 are formed within the cappinglayer 518 down to the surface of, and in connection with, the wire 514and the inductor 516, respectively, within the last metal wiring level.The openings 520, 522 may be formed using conventional photoresist andetching processes (not shown). A layer of conductive material 524, suchas TaN/Ti/TiN/AlCu/TiN, is then deposited over the surface of thestructure filling the openings 520, 522 (FIG. 49). The layer ofconductive material 524 may have a thickness in the range of about 0.3-6μm, e.g., 1 μm and the AlCu portion of the stack comprises most of thetotal thickness.

A layer of photo-imagable material, such as PSPI 526, or other similarmaterial is deposited over the surface of the structure 500. Asillustrated in FIG. 50, at least one opening 528 is formed within thePSPI 526 above the portion of the inductor 516, using conventionalphotoresist processing. The layer of PSPI 526 may have a thickness inthe range of about 1-30 μm, e.g., 10 μm.

The patterned plate process described in the first embodiment andillustrated in FIGS. 4-7 is then performed on the structure 500 to formthe electrical connection 530, comprising a liner 532, a seed layer 534and a conductive material 536, illustrated in FIG. 51. Thereafter, thePSPI 526 is removed using a non-oxygen plasma resist strip, a wet resiststrip with a DHF clean, or other similar process (FIG. 52).

As illustrated in FIG. 53, an insulative Cu diffusion barrier layer 538,comprising SiN, SiCN, etc., is deposited over the surface of thestructure 500. The insulative layer 538 may be formed using plasmaenhanced deposition or other similar deposition technique, to athickness in the range of about 0.05-1 μm, e.g., 0.1 μm.

The insulative layer 538 is then lithographically patterned (using alayer of photoresist, not shown) and etched, for example, using a RIEprocess, to remove select portions of the insulative layer 538 and thelayer of conductive material 524 from the structure 500, leaving theconductive material 524 and the insulative layer 538 above the wire 514and the portion of the inductor 516 (FIG. 54).

As illustrated in FIG. 55, a dielectric layer 540 is conformallydeposited over the surface of the structure 500. The dielectric layer540 may comprise a combination of SiO₂, SiN and polyimide, as discussedsupra. The dielectric layer 540 may be deposited using PECVD andspin-on, or other similar process. The individual layers of thedielectric 540 are not shown for purposes of simplicity.

An opening 542 is formed within the dielectric layer 540 above the wire514, as illustrated in FIG. 56. The opening 542 may be formed within thedielectric layer 540 using lithographic patterning and etching, as knownin the art. The opening 542 is formed through the dielectric layer 540and the insulative layer 538 down to the surface of the conductivematerial 524. As illustrated in FIG. 57, an electrical interconnection,such as a wire bond 544 is formed within the opening 542 usingconventional wire bond formation processes.

The structure 500 is a spiral inductor 533 having a top view similar tothe one shown in FIG. 11.

In accordance with a seventh embodiment, FIG. 58 shows a structure 600comprising a substrate 612 including at least one conductive elementwithin a last metal wiring level, in this example, a plurality ofconductive wires 614, 616, 618, 620 within a last metal wiring level ofthe structure 600. It should be noted that the last metal wiring levelcould be wired in parallel to underlying wires using vias to decreasethe overall resistance of the structure 600. A surface clean, such as a10 second NH₃ or H₂ plasma may be performed. A capping layer 622, suchas SiN, SiCN, etc., is then deposited over the surface of the structure600 using PECVD, HDPCVD, etc. The capping layer 622 may be depositedhaving a thickness in the range of about 20-200 nm, e.g., 100 nm.

Optionally, a passivation layer (not shown) may be deposited over thecapping layer 622, such as SiO₂ or a two layer dielectric, comprisingSiO₂/SiN. The passivation layer may be formed having a total thicknessin the range of about 0-2 μm, e.g., 0.5 μm. The passivation layer may bedeposited using PECVD, or other commonly used method.

A layer of photo-imagable material, such as PSPI 624 is deposited overthe surface of the structure 600, as further illustrated in FIG. 58. ThePSPI 624 may be formed using spin-on, or other similarly used technique,to a thickness in the range of about 5-50 μm, e.g., 10 μm. The PSPI 624is then patterned and developed to form at least one via opening 626, asillustrated in the cross-section view of the structure in FIG. 59, andthe top view of the structure in FIG. 60. The PSPI 624 is then curedusing known curing techniques.

As illustrated in FIG. 61, (wherein FIGS. 58 and 61-66 are taken alongline 58-58′ of FIG. 60), a second layer of photoresist 628 is thenapplied over the surface of the structure 600. The second layer ofphotoresist 628 may be deposited having a thickness in the range ofabout 5-15 μm, e.g., 10 μm. The second layer 628 is then patterned anddeveloped to form a plurality of feature openings 630, 632, 634, asshown in FIG. 62, which later become inductor wires.

A RIE, e.g., using PFC or PFC/HFC chemistry, is performed to remove thecapping layer 622, and optional passivation layer (not shown), at thebottom of the openings 630, 632, 634 exposing the wires 614, 616, 618,respectively, of the last metal wiring level, as shown in FIG. 63. Anoptional post etch clean may be performed using DHF, e.g., for 60seconds, using a 100:1 DHF. Preferably in a cluster tool, degas thesubstrate 612 (for example, at 150-400° C., e.g., 100:1 DHF, for 150seconds at about 200° C.). An argon sputter clean may then be performedto further clean the substrate 612 and exposed metal wires 614, 616, 618at the bottom of the openings 630, 632, 634, as known in the art.

The patterned plate process described in the first embodiment, andillustrated in FIGS. 4-7, is then performed to form first 636, second638 and third 640 portions of a transmission line or inductor 645,comprising a liner 642, a seed layer 644 and a conductive material 646,as shown in FIG. 64.

A resist strip is performed to remove the second layer of photoresist628, using either a reducing ambient on a standard downstream orparallel plate resist strip tool (a reducing ambient such as, H₂, NH₃,N₂, etc., not to include O₂; or using a low partial pressure of O₂ toavoid corroding the exposed Cu). The resist strip is controlled, eitherby time or process constraints, to leave most of the PSPI 624 on thesubstrate 612, e.g., at least 80% or more of the PSPI 624, as shown inFIG. 65.

As shown in FIG. 66, at least one electrical interconnection, such as awire bond or soldier bump C4 pad 648 is formed using similar methodsdescribed supra. If the RIE or wet etch process used to form the wirebond pad 648 is incompatible with the Cu wire used for the inductor 645,then, prior to formation, a selective conductive layer could be formedover the Cu wires, as discussed supra; or a dielectric passivation layer(not shown), such as 100 nm/100 nm SiN/SiO₂, may be deposited usingPECVD, etc., and a lithography/RIE step (not shown) may be added to openthe via for the wire bond pad 648.

FIG. 67 shows the top view of the structure 600, having the conductivevias 626 and first 636, second 638 and third 640 portions of thehorizontal inductor 645.

The various embodiments of the present invention described supra providea transmission line, or in particular, an inductor, formed above a lastmetal wiring level of a semiconductor substrate. In addition, thepresent invention provides the formation of at least a portion of anelectrical interconnection, such as a wire bond pad, substantiallyco-planar with the inductor.

1. A semiconductor structure, comprising: a substrate having a metalwiring level within the substrate; a capping layer on and above a topsurface of the substrate; an insulative layer on and above a top surfaceof the capping layer; an inductor comprising a first portion in andabove the insulative layer and a second portion in and above theinsulative layer; and a wire bond pad within the insulative layer,wherein the first portion the inductor has a height in a first directiongreater than a height of the wire bond pad in the first direction,wherein the first direction is perpendicularly directed from the topsurface of substrate toward the insulative layer.
 2. The structure ofclaim 1, wherein the inductor is a spiral inductor.
 3. The structure ofclaim 1, wherein the inductor is a horizontal inductor. 4-5. (canceled)6. The structure of claim 1, wherein a bottom surface of the insulativelayer is in direct mechanical contact with the top surface of thecapping layer, and wherein a bottom surface of the capping layer is indirect mechanical contact with at the top surface of the substrate. 7.The structure of claim 6, wherein the first portion of the inductorcomprises a first part disposed only above the insulative layer, asecond part contiguous with the first part of the first portion of theinductor and disposed only above and within the insulative layer, and athird part contiguous with the second part of the first portion of theinductor and disposed within the insulative layer and the capping layer,wherein the second portion of the inductor comprises a first partdisposed only above the insulative layer and a second part contiguouswith the first part of the second portion of the inductor and disposedonly above and within the insulative layer, wherein a width of the firstpart of the first portion of the inductor in a second direction exceedsa width of the second part of the first portion of the inductor in thesecond direction, wherein a width of the second part of the firstportion of the inductor in the second direction exceeds a width of thethird part of the first portion of the inductor in the second direction,wherein a width of the first part of the second portion of the inductorin the second direction exceeds a width of the second part of the secondportion of the inductor in the second direction, and wherein the seconddirection is orthogonal to the first direction.
 8. The structure ofclaim 7, wherein a top surface of the first part of the first portion ofthe inductor and a top surface of the first part of the second portionof the inductor are coplanar.
 9. The structure of claim 7, wherein thesecond part of the second portion of the inductor is above the cappinglayer and is not in direct mechanical contact with the capping layer.10. The structure of claim 7, wherein a height of the first part of thefirst portion of the inductor in the first direction is equal to aheight of the first part of the second portion of the inductor in thefirst direction, and wherein a height of the second part of the firstportion of the inductor in the first direction is equal to a height ofthe second part of the second portion of the inductor in the firstdirection.
 11. The structure of claim 7, wherein the metal wiring levelcomprises a first conductive wire and a second conductive wire, whereina top surface of the first conductive wire is in direct mechanicalcontact with a bottom surface of the third part of the first portion ofthe inductor, wherein a top surface of the second conductive wire is indirect mechanical contact with a bottom surface of the wire bond pad,and wherein the top surface of the first conductive wire, the topsurface of the second conductive wire, and the top surface of thesubstrate are coplanar.
 12. The structure of claim 11, wherein the firstconductive wire and the second conductive wire each comprise copper, andwherein the capping layer comprises a diffusion barrier that preventscopper from the first and second conductive wires from diffusing throughthe capping layer into the insulative layer.